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Audio Power Chipset for Class D Digital Amplifiers

THE IR ADVANTAGE
When combined with Class D amplifier controller and compared to Class AB amplifier:
Increases efficiency from 50% to 90%
Reduces size by a factor of four
Reduces THD for high quality sound

FEATURES AT A GLANCE
HEXFET® power MOSFETs with high speed gate driver ICs
Up to 1MHz operating frequency with 10ns deadtime control
Low RDS(on), QGD and COSS for low power losses
Fast and soft recovery body diode to minimize THD
Gate driver IC for fast switching and low power losses

Cirrus Logic and IR

International Rectifier's power semiconductor chipsets for Class D amplifiers include HEXFET® power MOSFETs and high speed gate driver ICs. The ICs and MOSFETs in the selector guides below have been specifically matched for use with Class D power amplifier controller IC.

Today, most audio applications use Class AB linear amplifiers. The emerging trend is to move to digital amplifiers, which offer a number of benefits over the traditional linear solution. With a higher efficiency, digital amplifiers are smaller, lighter, streamlined, cool and quiet with extended battery life compared to the power hungry analog devices.

International Rectifier has leveraged its applications expertise in switching mode power supplies along with its advanced MOSFET technology to offer high performance MOSFETs for Class D amplifiers. In the Class D amplifier topologies, which evolved from switch mode power supplies, dead time control is critical to reduce total harmonic distortion (THD) and provide high audio quality.

The HEXFET MOSFETs selected for Class D amplifiers offer switching speeds up to 1MHz, without any compromise in efficiency, thanks to their low gate-to-drain charge (QGD), output capacitance (COSS) and on resistance (RDS(on)). These MOSFETs minimize conduction and switching losses to improve the efficiency of Class D amplifiers. The industry norm efficiency for Class AB amplifier with bipolar transistors averages 50%. IR audio power chipset combined with Class D amplifier controller deliver a breakthrough efficiency of over 90%.

The low output capacitance and soft and fast recovery diode of the HEXFET MOSFETs enhance Class D amplifier to significantly reduce distortions in sound output. The gate driver IC combines, in a single chip, most of the functions to drive the MOSFETs and provides very fast switching speeds and low power dissipation.

Enhanced efficiency allows manufacturers to dramatically shrink the size of a typical audio amplifier by a factor of four. Better efficiency also translates in weight and system cost reduction. The size reduction increases product design creativity, allowing the amplifier to be built into a speaker or other unit, such as set-top boxes and DVD players. Increased efficiency also enables battery-powered amplifiers that can run up to three times as long compared to conventional amplifiers.

SPECIFICATIONS
HALF BRIDGE TOPOLOGY, 4W LOAD
Output RMS Power
Part Number
Max. Recommended
Rail Voltage
Recommended
Gate Driver
25W
+/- 17V
-
30W
+/- 18V
-
35W
+/- 20V
50W
+/- 24V
100W
+/- 33V
150W
+/- 41V
200W
+/- 47V
250W
+/- 53V
400W
+/- 67V
500W
+/- 74V
1000W
+/- 105V
HALF BRIDGE TOPOLOGY, 8W LOAD
Output RMS Power
Part Number
Max. Recommended Rail
Voltage
Recommended
Gate Driver
25W
+/- 24V
-
30W
+/- 26V
35W
+/- 28V
50W
+/- 33V
100W
+/- 47V
150W
+/- 58V
200W
+/- 67V
250W
+/- 74V
400W
+/- 94V
500W
+/- 105V
FULL BRIDGE TOPOLOGY, 4W LOAD
Output RMS Power
Part Number
Max. Recommended
Rail Voltage
Recommended
Gate Driver
25W
17V
-
30W
18V
-
35W
20V
-
50W
24V
100W
33V
150W
41V
200W
47V
250W
53V
400W
67V
500W
74V
1000W
105V
2000W
149V
FULL BRIDGE TOPOLOGY, 8W LOAD
Output RMS Power
Part Number
Max. Recommended Rail
Voltage
Recommended
Gate Driver
25W
24V
-
30W
26V
35W
28V
50W
33V
100W
47V
150W
58V
200W
67V
250W
74V
400W
94V
500W
105V
1000W
149
2000W
210V
Note: Switching frequency up to 400kHz, max. modulation index M=85%



For more information:
Contact the Technical Assistance Center or your local Sales Rep.

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